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Electrical activity...
Electrical activity of carbon-hydrogen centers in Si
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- Andersen, O. (author)
- Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester M60 1QD, United Kingdom
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- Peaker, A.R. (author)
- Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester M60 1QD, United Kingdom
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- Dobaczewski, L. (author)
- Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester M60 1QD, United Kingdom; Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
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- Nielsen, K. Bonde (author)
- Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
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- Hourahine, B. (author)
- School of Physics, The University of Exeter, Exeter EX4 4QL, United Kingdom
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- Jones, R. (author)
- School of Physics, The University of Exeter, Exeter EX4 4QL, United Kingdom
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- Briddon, P. R. (author)
- Department of Physics, The University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom
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- Öberg, Sven (author)
- Luleå tekniska universitet,Matematiska vetenskaper
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Centre for Electronic Materials, UMIST, PO. Box 88, Manchester M60 1QD, United Kingdom Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester M60 1QD, United Kingdom; Institute of Physics, Polish Academy of Sciences, Warsaw, Poland (creator_code:org_t)
- 2002
- 2002
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:23, s. 235205-1
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.
Subject headings
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Keyword
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publication and Content Type
- ref (subject category)
- art (subject category)
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